Power MOSFET
RQ3E100BN
Nch 30V 21A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 10.4mΩ
±21A 15W
lFeatures
1) Low on - resistance 2)...
Description
RQ3E100BN
Nch 30V 21A Power MOSFET
VDSS RDS(on)(Max.)
ID PD
30V 10.4mΩ
±21A 15W
lFeatures
1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free
lOutline
HSMT8
lInner circuit
Datasheet
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Quantity (pcs)
12 3000
Taping code
TB
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
E100BN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Tc = 25°C Ta = 25°C
ID*1 ID
±21 A ±10 A
Pulsed drain current
IDP*2 ±40 A
Gate - Source voltage
VGSS
±20 V
Avalanche current, single pulse
IAS*3 12 A
Avalanche energy, single pulse
EAS*3
14 mJ
Power dissipation
PD*1 15 W PD*4 2.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.004
RQ3E100BN
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient
Datasheet
Symbol
RthJC*1 RthJA*4
Values Min. Typ. Max.
- - 8.3 - - 62.5
Unit
℃/W ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS...
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