Power MOSFET
RS1E200BN
Nch 30V 68A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
30V 3.9mΩ ±68A 25W
lFeatures
1) Low on - ...
Description
RS1E200BN
Nch 30V 68A Power MOSFET
Datasheet
VDSS RDS(on)(Max.)
ID PD
30V 3.9mΩ ±68A 25W
lFeatures
1) Low on - resistance 2) High Power small mold Package (HSOP8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested
lOutline
HSOP8
lInner circuit
lPackaging specifications Packing
Embossed Tape
Reel size (mm)
330
lApplication Switching
Type Tape width (mm) Quantity (pcs)
12 2500
Taping code
TB
Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
RS1E200BN
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
30 V
Continuous drain current
Tc = 25°C Ta = 25°C
ID*1 ID
±68 A ±20 A
Pulsed drain current
IDP*2 ±80 A
Gate - Source voltage
VGSS
±20 V
Avalanche current, single pulse
IAS*3 32 A
Avalanche energy, single pulse
EAS*3
130 mJ
Power dissipation
PD*1 25 W PD*4 3.0 W
Junction temperature
Tj 150 ℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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20190527 - Rev.006
RS1E200BN
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient
Datasheet
Symbol
RthJC*1 RthJA*4
Values Min. Typ. Max.
- - 5.0 - - 41.7
Unit
℃/W ℃/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain...
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