Document
REV. 1.6 FS8205A-DS-16_EN
MAY 2014
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Datasheet
FS8205A
Dual N-Channel Enhancement Mode Power MOSFET
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Fortune Semiconductor Corporation 23F, No. 29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874 www.ic-fortune.com
This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product
1. Features
1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A)
2. Applications Li-ion battery management applications
3. Ordering Information
Product Number Description
FS8205A
TSSOP8 package version
Package Type
TSSOP-8
Quantity/Reel
3,000
4. Pin Assignment
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5. Absolute Maximum Ratings
Symbol VDS VGS ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range
6. Thermal Data
Symbol Rthj-a
Parameter Thermal Resistance Junction-ambient3
Rating 20 ±12 6 5 25 1 0.008 -55 to 150 -55 to 150
Units V V A A A W W/℃ ℃ ℃
Value Max. 125
Unit ℃/W
7. Electrical Characteristics
Electrical Characteristics @Tj = 25℃ ( unless otherwise specified )
Symbol
Parameter
Test Conditions
Static Characteristics
BVDSS Δ BVDSS/Δ Tj
RDS(ON)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance2
VGS = 0V, ID = 250uA
Reference to 25℃, ID=1mA
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 3A
VGS(th) IDSS IGSS
Gate Threshold Voltage Drain-Source Leakage Current (Tj = 25℃) Drain-Source Leakage Current (Tj = 70℃) Gate-Source Leakage
VDS = VGS, ID = 250uA VDS =16V, VGS = 0V VDS =16V, VGS = 0V VGS = ±10V
Min.
20 0.45 -
Typ.
0.1 23 30 -
Max.
28 37 1.2 1 25 ±0.1
Units
V V/℃ mΩ mΩ V uA uA uA
8. Source-Drain Diode
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
IS Continuous Source Current (Body Diode) VD = VG = 0V, VS = 1.2V
- - 0.83 A
VSD Forward On Voltage2
Tj = 25℃, IS = 1.25A, VGS = 0V - - 1.2 V
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Notes:
1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;208℃/W when mounted on Min. copper
pad.
IsFor (A)RefPerrFoe
Vth - Normalized Threshold Voltage
Id, Drain Current ( A )
Rds(on)pOn-eNormalizcRedrteTieUOsnNlEy Drain - Source On-Resistance
Id, Drain'Current ( A )
9. Typical Characteristics
On-Region characteristics @ Ta=25Deg
25
20
15
10 5
0 0
-5
0.5 1 1.5 Vds, Drain to Source Voltage ( V )
2
2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
Fig 1. Typical Output Characteristics
On-Resistance Variation with Temperature Vgs=4.5V, Ids=4A
1.4 1.2
1 0.8 0.6 0.4 0.2
0 -50
0 50 100 Temperature ( Deg )
150
Fig 3. Normalized On-Resistance
Forward Characteristic of Rev erse Diode
2.5
2
1.5 Ta=25Deg Ta=125Deg
1
0.5
0 -0.3 0.2 0.7 1.2
Vsd, Soucre to Drain Voltage ( V )
Fig 5. Forward Characteristic of Reverse Diode
On-Region characteristics @ Ta=125Deg
25
20
15
10 5
0 0
-5
0.5 1 1.5 2 Vds, Drain to Source Voltage ( V )
2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
Fig 2. Typical Output Characteristics
Gate Threshold Voltage Temperature Coefficient Vgs=Vdg, Ids=250uA
1.4 1.2
1 0.8 0.6 0.4 0.2
0 -50
0 50 100 Temperature ( Deg )
150
Fig 4. Gate Threshold Variation with Temperature
10. Package Information
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11. Revision History
Version
1.0 1.1
Date
2009/02/10 2009/04/28
1.2 2009/08/04
1.3 2010/06/02 1.4 2010/06/10 1.5 2011/04/27
1.6 2014/05/22
Page -
3~4
3~4
3~4 4 4
2
Description
Version 1.0 released Rds25 TYP 25mohm MAX 32mohm Rds45 TYP 20mohm MAX 25mohm ID @TA = 25℃ 6A ID @TA = 70℃ 5A ID pulse 300μ S 25A
Rds25 TYP 27mohm MAX 35mohm Rds45 TYP 21mohm MAX 25mohm Rds25 ID:3A Rds45 ID:4A
Rds45 TYP 22mohm MAX 27mohm IDSS Test Conditions:VDS=16V VGS=0V
Rds25 TYP:30mohm MAX:37mohm Rds45 TYP:23mohm MAX:28mohm VGS(th) MIN:0.45V MAX:1.2V IGSS MAX:±0.1uA
Revised company address
.