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FS8205A Dataheets PDF



Part Number FS8205A
Manufacturers Fortune Semiconductor
Logo Fortune Semiconductor
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet FS8205A DatasheetFS8205A Datasheet (PDF)

REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrFoepOnecRrteTieUOsnNlEy' Fortune Semiconductor Corporation 23F, No. 29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without furt.

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REV. 1.6 FS8205A-DS-16_EN MAY 2014 For RefPerrFoepOnecRrteTieUOsnNlEy' Datasheet FS8205A Dual N-Channel Enhancement Mode Power MOSFET For RefPerrFoepOnecRrteTieUOsnNlEy' Fortune Semiconductor Corporation 23F, No. 29-5, Sec. 2, Zhongzheng E. Rd., Danshui Dist, New Taipei City 251, Taiwan Tel.:886-2-28094742 Fax:886-2-28094874 www.ic-fortune.com This manual contains new product information. Fortune Semiconductor Corporation reserves the rights to modify the product specification without further notice. No liability is assumed by Fortune Semiconductor Corporation as a result of the use of this product. No rights under any patent accompany the sale of the product 1. Features 1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2. Applications  Li-ion battery management applications 3. Ordering Information Product Number Description FS8205A TSSOP8 package version Package Type TSSOP-8 Quantity/Reel 3,000 4. Pin Assignment For RefPerrFoepOnecRrteTieUOsnNlEy' 5. Absolute Maximum Ratings Symbol VDS VGS ID @TA = 25℃ ID @TA = 70℃ IDM PD @TA = 25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range 6. Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ±12 6 5 25 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Value Max. 125 Unit ℃/W 7. Electrical Characteristics Electrical Characteristics @Tj = 25℃ ( unless otherwise specified ) Symbol Parameter Test Conditions Static Characteristics BVDSS Δ BVDSS/Δ Tj RDS(ON) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance2 VGS = 0V, ID = 250uA Reference to 25℃, ID=1mA VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 3A VGS(th) IDSS IGSS Gate Threshold Voltage Drain-Source Leakage Current (Tj = 25℃) Drain-Source Leakage Current (Tj = 70℃) Gate-Source Leakage VDS = VGS, ID = 250uA VDS =16V, VGS = 0V VDS =16V, VGS = 0V VGS = ±10V Min. 20 0.45 - Typ. 0.1 23 30 - Max. 28 37 1.2 1 25 ±0.1 Units V V/℃ mΩ mΩ V uA uA uA 8. Source-Drain Diode Symbol Parameter Test Conditions Min. Typ. Max. Units IS Continuous Source Current (Body Diode) VD = VG = 0V, VS = 1.2V - - 0.83 A VSD Forward On Voltage2 Tj = 25℃, IS = 1.25A, VGS = 0V - - 1.2 V For RefPerrFoepOnecRrteTieUOsnNlEy' Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;208℃/W when mounted on Min. copper pad. IsFor (A)RefPerrFoe Vth - Normalized Threshold Voltage Id, Drain Current ( A ) Rds(on)pOn-eNormalizcRedrteTieUOsnNlEy Drain - Source On-Resistance Id, Drain'Current ( A ) 9. Typical Characteristics On-Region characteristics @ Ta=25Deg 25 20 15 10 5 0 0 -5 0.5 1 1.5 Vds, Drain to Source Voltage ( V ) 2 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V Fig 1. Typical Output Characteristics On-Resistance Variation with Temperature Vgs=4.5V, Ids=4A 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 50 100 Temperature ( Deg ) 150 Fig 3. Normalized On-Resistance Forward Characteristic of Rev erse Diode 2.5 2 1.5 Ta=25Deg Ta=125Deg 1 0.5 0 -0.3 0.2 0.7 1.2 Vsd, Soucre to Drain Voltage ( V ) Fig 5. Forward Characteristic of Reverse Diode On-Region characteristics @ Ta=125Deg 25 20 15 10 5 0 0 -5 0.5 1 1.5 2 Vds, Drain to Source Voltage ( V ) 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V Fig 2. Typical Output Characteristics Gate Threshold Voltage Temperature Coefficient Vgs=Vdg, Ids=250uA 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 50 100 Temperature ( Deg ) 150 Fig 4. Gate Threshold Variation with Temperature 10. Package Information For RefPerrFoepOnecRrteTieUOsnNlEy' 11. Revision History Version 1.0 1.1 Date 2009/02/10 2009/04/28 1.2 2009/08/04 1.3 2010/06/02 1.4 2010/06/10 1.5 2011/04/27 1.6 2014/05/22 Page - 3~4 3~4 3~4 4 4 2 Description Version 1.0 released Rds25 TYP 25mohm MAX 32mohm Rds45 TYP 20mohm MAX 25mohm ID @TA = 25℃ 6A ID @TA = 70℃ 5A ID pulse 300μ S 25A Rds25 TYP 27mohm MAX 35mohm Rds45 TYP 21mohm MAX 25mohm Rds25 ID:3A Rds45 ID:4A Rds45 TYP 22mohm MAX 27mohm IDSS Test Conditions:VDS=16V VGS=0V Rds25 TYP:30mohm MAX:37mohm Rds45 TYP:23mohm MAX:28mohm VGS(th) MIN:0.45V MAX:1.2V IGSS MAX:±0.1uA Revised company address .


TIP29C FS8205A FS8205A


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