FS8205A MOSFET Datasheet

FS8205A Datasheet, PDF, Equivalent


Part Number

FS8205A

Description

Dual N-Channel Enhancement Mode MOSFET

Manufacture

CanSheng Industry

Total Page 5 Pages
Datasheet
Download FS8205A Datasheet


FS8205A
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com
FS8205A
Dual N-Channel Enhancement Mode MOSFET
Features
z 20V/6A,
RDS(ON)<25mΩ @ VGS=4.5V
RDS(ON) <34mΩ @ VGS=2.5V
z Super High Dense Cell Design
z Reliable and Rugged
z Lead Free Available (RoHS Compliant)
Pin Description
Top View
D1
S1 2
S1 3
G1 4
8D
7 S2
6 S2
5 G2
TSSOP-8
Applications
z Portable Equipment and Battery Powered
Systems.
N Channel MOSFET
1/5

FS8205A
FS8205A
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300μs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Notes
*Surface Mounted on 1in2 pad area, t 10sec.
VGS=4.5V
TA=25°C
TA=100°C
Rating
20
±8
6
20
1
150
-55 to 150
1.25
0.5
100
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
8205A
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VGS=0V, IDS=250μA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250μA
VGS=±8V, VDS=0V
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=5.2A
20
0.5
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=1A, VGS=0V
IDS=6A, dlSD/dt=100A/μs
V
1
μA
30
0.7 1.5 V
±100 nA
20 25
mΩ
27 34
0.8 1.3 V
14 ns
5 nC
2/5


Features ShenZhen CanSheng Industry Development C o.,Ltd. www.szcansheng.com FS8205A Du al N-Channel Enhancement Mode MOSFET F eatures z 20V/6A, RDS(ON)<25mΩ @ VGS=4 .5V RDS(ON) <34mΩ @ VGS=2.5V z Super H igh Dense Cell Design z Reliable and Ru gged z Lead Free Available (RoHS Compli ant) Pin Description Top View D1 S1 2 S1 3 G1 4 8D 7 S2 6 S2 5 G2 TSSOP-8 Applications z Portable Equipment and Battery Powered Systems. N Channel MO SFET 1/5 FS8205A Absolute Maximum Ra tings (TA=25°C Unless Otherwise Noted) Symbol VDSS VGSS ID* IDM* IS* TJ TSTG Parameter Drain-Source Voltage Gate-S ource Voltage Continuous Drain Current 300μs Pulsed Drain Current Diode Conti nuous Forward Current Maximum Junction Temperature Storage Temperature Range PD* Maximum Power Dissipation RθJA* T hermal Resistance-Junction to Ambient N otes: *Surface Mounted on 1in2 pad ar ea, t ≤ 10sec. VGS=4.5V TA=25°C TA= 100°C Rating 20 ±8 6 20 1 150 -55 to 150 1.25 0.5 100 Unit V A A °C W °C/W Electrical Characteristics (TA=25°.
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