Mode MOSFET. FS8205A Datasheet

FS8205A MOSFET. Datasheet pdf. Equivalent


CanSheng Industry FS8205A
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com
FS8205A
Dual N-Channel Enhancement Mode MOSFET
Features
z 20V/6A,
RDS(ON)<25mΩ @ VGS=4.5V
RDS(ON) <34mΩ @ VGS=2.5V
z Super High Dense Cell Design
z Reliable and Rugged
z Lead Free Available (RoHS Compliant)
Pin Description
Top View
D1
S1 2
S1 3
G1 4
8D
7 S2
6 S2
5 G2
TSSOP-8
Applications
z Portable Equipment and Battery Powered
Systems.
N Channel MOSFET
1/5


FS8205A Datasheet
Recommendation FS8205A Datasheet
Part FS8205A
Description Dual N-Channel Enhancement Mode MOSFET
Feature FS8205A; ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com FS8205A Dual N-Channel Enhancem.
Manufacture CanSheng Industry
Datasheet
Download FS8205A Datasheet




CanSheng Industry FS8205A
FS8205A
Absolute Maximum Ratings (TA=25°C Unless Otherwise Noted)
Symbol
VDSS
VGSS
ID*
IDM*
IS*
TJ
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300μs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
PD* Maximum Power Dissipation
RθJA* Thermal Resistance-Junction to Ambient
Notes
*Surface Mounted on 1in2 pad area, t 10sec.
VGS=4.5V
TA=25°C
TA=100°C
Rating
20
±8
6
20
1
150
-55 to 150
1.25
0.5
100
Unit
V
A
A
°C
W
°C/W
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
8205A
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) a Drain-Source On-state Resistance
VGS=0V, IDS=250μA
VDS=16V, VGS=0V
TJ=85°C
VDS=VGS, IDS=250μA
VGS=±8V, VDS=0V
VGS=4.5V, IDS=6A
VGS=2.5V, IDS=5.2A
20
0.5
Diode Characteristics
VSDa Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD=1A, VGS=0V
IDS=6A, dlSD/dt=100A/μs
V
1
μA
30
0.7 1.5 V
±100 nA
20 25
mΩ
27 34
0.8 1.3 V
14 ns
5 nC
2/5



CanSheng Industry FS8205A
FS8205A
Electrical Characteristics (Cont.)(TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
Dynamic Characteristics b
RG Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VGS=0V,
VDS=10V,
Frequency=1.0MHz
td(ON)
Tr
td(OFF)
Tf
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
VDD=10V, RL=10Ω,
IDS=1A, VGEN=4.5V,
RG=6Ω
Gate Charge Characteristics b
Qg Total Gate Charge
Qgs Gate-Source Charge
IDS=6A, dlSD/dt=100A/μs
Qgd Gate-Drain Charge
Notes
a : Pulse test ; pulse width300μs, duty cycle2%.
b : Guaranteed by design, not subject to production testing.
8205A
Min. Typ. Max.
5.5
595
140
125
3.5 7
13.5 25
32 58
6.6 13
21 29
1.3
3.3
Unit
Ω
pF
ns
nC
3/5







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)