Document
MCP14E9/10/11
3.0A Dual High-Speed Power MOSFET Driver With Enable
Features
• High Peak Output Current: 3.0A (typical) • Independent Enable Function for Each Driver
Output • Wide Input Supply Voltage Operating Range:
- 4.5V to 18V • Low Shoot-Through/Cross-Conduction Current in
Output Stage • High Capacitive Load Drive Capability:
- tR: 14 ns with 1800 pF load (typical) - tF: 17 ns with 1800 pF load (typical) • Short Delay Times: - tD1: 45 ns (typical) - tD2: 45 ns (typical) • Low Supply Current: - With Logic ‘1’ Input/Enable – 1 mA (typical) - With Logic ‘0’ Input/Enable – 300 µA (typical) • Latch-up Protected: Passed JEDEC JESD78A • Logic Input will Withstand Negative Swing, up to 5V • Space-Saving Packages: - 8-Lead SOIC, PDIP, 6x5 DFN
Applications
• Switch Mode Power Supplies • Pulse Transformer Drive • Line Drivers • Motor and Solenoid Drive
General Description
The MCP14E9/10/11 devices are high-speed MOSFET drivers, capable of providing 3.0A of peak current. The dual inverting, dual non-inverting and complementary outputs are directly controlled from either TTL or CMOS (3V to 18V). These devices also feature low shoot-through current, near matched rise/fall times and propagation delays, which make them ideal for high switching frequency applications.
The MCP14E9/10/11 devices operate from a 4.5V to 18V single power supply and can easily charge and discharge 1800 pF of MOSFET gate capacitance. They provide low enough impedances, in both the ON and OFF states, to ensure the MOSFETs’ intended state will not be affected, even by large transients.
The additional control of the MCP14E9/10/11 outputs is allowed by the use of separate enable functions. The ENB_A and ENB_B pins are active-high and are internally pulled up to VDD. The pins may be left floating for standard operation.
The MCP14E9/10/11 dual output 3.0A driver family is offered in both surface-mount and pin-through-hole packages with a -40oC to +125oC temperature rating. The low thermal resistance of the thermally enhanced DFN package allows greater power dissipation capability for driving heavier capacitive or resistive loads.
These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity) occurs on the ground pin. The devices are fully latch-up protected when tested according to JEDEC JESD78A. All terminals are fully protected against Electrostatic Discharge (ESD), up to 4 kV (HBM) or 400V (MM).
© 2011 Microchip Technology Inc.
DS25005A-page 1
MCP14E9/10/11
Package Types
MCP14E10
MCP14E9 PDIP, SOIC
MCP14E11
ENB_A 1 IN A 2 GND 3 IN B 4
8 ENB_B ENB_B ENB_B
7 OUT A OUT A OUT A
6 VDD
VDD
VDD
5 OUT B OUT B OUT B
ENB_A 1
IN A 2 GND 3 IN B 4
6x5 DFN*
EP 9
MCP14E10
MCP14E9
MCP14E11
8 ENB_B ENB_B ENB_B
7 OUT A 6 VDD 5 OUT B
OUT A VDD OUT B
OUT A VDD OUT B
* Includes Exposed Thermal Pad (EP); see Table 3-1.
Functional Block Diagram(1)
VDD Internal Pull-up Enable
Inverting Non-Inverting
VDD Output
Input Effective Input C = 20 pF (Each Input)
GND
4.7V
4.7V
MCP14E9 Dual Inverting MCP14E10 Dual Non-Inverting MCP14E11 One Inverting, One Non-Inverting
Note 1: Unused inputs should be grounded.
DS25005A-page 2
© 2011 Microchip Technology Inc.
MCP14E9/10/11
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V Input Voltage ............................... (VDD + 0.3V) to (GND – 5V) Enable Voltage ............................ (VDD + 0.3V) to (GND – 5V) Input Current (VIN>VDD)................................................50 mA Package Power Dissipation (TA = +50oC) 8L-DFN ........................................................................ Note 3 8L-PDIP ........................................................................1.12W 8L-SOIC .....................................................................669 mW
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC CHARACTERISTICS(2)
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min Typ Max Units
Conditions
Input
Logic ‘1’, High Input Voltage Logic ‘0’, Low Input Voltage Input Current Input Voltage
VIH VIL IIN VIN
2.4
1.5 —
V
—
1.3 0.8
V
-1 — 1 µA 0V ≤ VIN ≤ VDD -5 — VDD + 0.3 V
Output
High Output Voltage Low Output Voltage Output Resistance, High Output Resistance, Low Peak Output Current Switching Time(1)
VOH VOL ROH ROL IPK
VDD – 0.025 — — — —
— — 4 4 3
— 0.025
7 7 —
V DC Test
V DC Test
Ω IOUT = 10 mA, VDD = 18V Ω IOUT = 10 mA, VDD = 18V A VDD = 18V(2)
.