RN1112F

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit: mm l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25°C) Characterisstic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO Ic Pc Tj Tstg Rating 50 50 Unit JEDEC V EIAJ V TOSHIBA 5V 100 mA 100 mW 150 °C −55~150 °C ― ― 2-2HA1A Electrical Characteristics (Ta = 25°C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Translation frequency Collector output capacitance Input resistor RN1112F RN1113F Symbol ICBO IEBO hFE VCE (sat) fT Cob R1 Test Circuit Test Condition ― VCB = 50V, IE = 0 ― VEB = 5V, IC = 0 ― VCE = 5V, IC = 1mA ― IC = 5mA, IB = 0.25mA ― VCE = 10V, IC = 5mA ― VCB = 10V, IE = 0, f = 1MHz ―― Min ― ― 120 ― ― ― 15.4 32.9 Typ. ― ― ― 0.1 250 3 22 47 Max 100 100 700 0.3 ― 6 28.6 61.1 Unit nA nA ― V MHz pF kΩ 1 2001-06-07 RN1112F,RN1113F 2 2001-06-07 RN1112F,RN1113F 3 2001-06-07 Type Name RN1112F RN1113F Marking RN1112F,RN1113F 4 2001-06-07 RN1112F,RN1113F RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continu...