4.0 AMP TRIAC
CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2
4.0 AMP TRIAC 200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCR...
Description
CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2
4.0 AMP TRIAC 200 THRU 800 VOLTS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CQ202-4B-2 series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants.
MARKING: FULL PART NUMBER
TO-202-2 CASE
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CQ202
SYMBOL -4B-2
Peak Repetitive Off-State Voltage
VDRM
200
RMS On-State Current (TC=80°C)
IT(RMS)
Peak Non-Repetitive Surge Current (t=8.3ms) ITSM
Peak Non-Repetitive Surge Current (t=10ms) ITSM
I2t Value for Fusing (t=10ms)
I2t
Peak Gate Power (tp=10μs) Average Gate Power Dissipation Peak Gate Current (tp=10μs) Storage Temperature Junction Temperature Thermal Resistance Thermal Resistance
PGM PG(AV)
IGM Tstg TJ ΘJA ΘJC
CQ202 -4D-2 400
CQ202 -4M-2 600
4.0
40
35
6.0
3.0
0.2
1.2
-40 to +150
-40 to +125
60
7.5
CQ202 -4N-2 800
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IDRM
Rated VDRM, RGK=1.0KΩ
IDRM
Rated VDRM, RGK=1.0KΩ, TC=125°C
IGT VD=12V, QUAD I, II, III
IGT VD=12V, QUAD IV
IH RGK=1.0KΩ
VGT
VD=12V, QUAD I, II, III
VGT
VD=12V, QUAD IV
VTM
ITM=6.0A, tp=380μs
dv/dt
VD=⅔ VDRM, TC=125°C
5.0
TYP
6.6 35 5.2 1.1 2.0 1.25
MAX 10 200 20 50 25 1.5 2.5 1.6
UNITS V A A A A2s W W A °C °C
°C/W °C/W
UNITS μA μA mA mA mA V V V V/μs
R2 (23-April 2012)
CQ202-4B-2 CQ202-4D-2 CQ202-4M-2 CQ202-4N-2
4.0 AMP...
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