Document
Features
Low RDS(ON): 75 m @VGS = -4.5V 110 m @VGS = -2.7V 125 m @VGS = -2.5V
Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
DMP2130L
P-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT23 Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Below Weight: 0.008 grams (approximate)
Drain
SOT23
Gate
D
Top View
Source
Internal Schematic
GS
Top View
Ordering Information (Note 4)
Notes:
Part Number DMP2130L-7
Case SOT23
Packaging 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
MP1
Chengdu A/T Site
YM YM
MP1
Shanghai A/T Site
MP1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2007 U
Jan 1
2008 V
Feb 2
2009 W
Mar 3
2010 X
Apr 4
2011 Y
2012 Z
2013 A
May Jun 56
Jul Aug 78
2014 B
Sep 9
2015 C
Oct O
2016 D
Nov N
2017 E
Dec D
DMP2130L
Document number: DS31346 Rev. 5 - 2
1 of 5 www.diodes.com
October 2013
© Diodes Incorporated
DMP2130L
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous
Pulsed Drain Current (Note 6) Body-Diode Continuous Current (Note 5)
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IDM IS
Value -20
12
-3.0 -2.4
-15 2.0
Unit V V
A
A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5); Steady-State Operating and Storage Temperature Range
Symbol PD RJA
TJ, TSTG
Value 1.4 90
-55 to +150
Unit W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 7)
Symbol Min
TJ = 25C
BVDSS IDSS IGSS
VGS(th) ID (ON)
-20
-0.6 -15
Static Drain-Source On-Resistance (Note 7)
RDS(ON)
Forward Transconductance (Note 7) Diode Forward Voltage (Note 7) Maximum Bo.