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DMP2130L Dataheets PDF



Part Number DMP2130L
Manufacturers Diodes
Logo Diodes
Description P-Channel MOSFET
Datasheet DMP2130L DatasheetDMP2130L Datasheet (PDF)

Features  Low RDS(ON):  75 m @VGS = -4.5V  110 m @VGS = -2.7V  125 m @VGS = -2.5V  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data  Case: SOT23  Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal.

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Features  Low RDS(ON):  75 m @VGS = -4.5V  110 m @VGS = -2.7V  125 m @VGS = -2.5V  Low Input/Output Leakage  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability DMP2130L P-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data  Case: SOT23  Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3  Terminal Connections: See Diagram Below  Weight: 0.008 grams (approximate) Drain SOT23 Gate D Top View Source Internal Schematic GS Top View Ordering Information (Note 4) Notes: Part Number DMP2130L-7 Case SOT23 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information MP1 Chengdu A/T Site YM YM MP1 Shanghai A/T Site MP1 = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2007 U Jan 1 2008 V Feb 2 2009 W Mar 3 2010 X Apr 4 2011 Y 2012 Z 2013 A May Jun 56 Jul Aug 78 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D DMP2130L Document number: DS31346 Rev. 5 - 2 1 of 5 www.diodes.com October 2013 © Diodes Incorporated DMP2130L Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 5) Continuous Pulsed Drain Current (Note 6) Body-Diode Continuous Current (Note 5) TA = +25°C TA = +70°C Symbol VDSS VGSS ID IDM IS Value -20 12 -3.0 -2.4 -15 2.0 Unit V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5); Steady-State Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 1.4 90 -55 to +150 Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage On State Drain Current (Note 7) Symbol Min TJ = 25C BVDSS IDSS IGSS VGS(th) ID (ON) -20   -0.6 -15 Static Drain-Source On-Resistance (Note 7) RDS(ON)  Forward Transconductance (Note 7) Diode Forward Voltage (Note 7) Maximum Bo.


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