DMS2095LFDB

NEW PRODUCT Product Summary V(BR)DSS -20V VR 20V MOSFET RDS(on) max 95mΩ @ VGS = -4.5V 120mΩ @ VGS = -2.5V 150mΩ @ VGS = -1.8V SCHOTTKY DIODE VF max 400mV @ IF = 0.5A 470mV @ IF = 1.0A ID -3.4A -3.0A -2.7A IO 1.0A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Power management functions DMS2095LFDB P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SCHOTTKY DIODE Features and Benefits MOSFET with Low RDS(ON) – minimize conduction losses Low Gate Threshold Voltage, -1.3V Max Schottky Diode with Low Forward Voltage Drop Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: U-DFN2020-6 Type B Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (approximate) U-DFN2020-6 Type B S D G D NC Pin1 A K Bottom View K DA G S Q1 P-MOSFET K D1 SCHOTTKY DIODE Ordering Information (Note 4) Notes: Part Number DMS2095LFDB-7 DMS2095LFDB-13 Case U-DFN2020-6 Type B U-D...