DMS3012SFG

DMS3012SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE POWERDI® Product Summary V(BR)DSS RDS(ON) 10mΩ @ VGS = 10V 30V 15mΩ @ VGS = 4.5V Package POWERDI 3333-8 ID TA = +25°C 12A 9.5A Description This MOSFET is designed to minimize on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting Power Management Functions DC-DC Converters Features DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver:  Low RDS(ON) – minimize conduction losses  Low VSD – reducing the losses due to body diode conduction  Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses  Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot through or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8, enabling smaller end product 100% UIS (Avalanche) rated 100% Rg tested Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connec...