DMT6008LFG

ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMT6008LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 7.5mΩ @ VGS = 10V 11.5mΩ @ VGS = 4.5V ID max TC = +25°C 60A 49A Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Synchronous Rectifier Backlighting Power Management Functions DC-DC Converters ESD PROTECTED S Pin 1 S S G D D D D Bottom View Features and Benefits Low RDS(ON) – Ensures on State Losses Are Minimized Excellent Qgd x RDS (ON) Product (FOM) Advanced Technology for DC/DC Converts Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product 100% UIS (Avalanche) rated ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: POWERDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (approximate) D Top View Internal Schematic ...