DMT8012LFG

ADVNAENWCEP IRNNOEFDWOURPCRTMOADTIUOCNT DMT8012LFG N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 80V RDS(ON) max 16mΩ @ VGS = 10V 22mΩ @ VGS = 6V ID max TC = +25°C 35A 30A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Synchronous Rectifier Backlighting Power Management Functions DC-DC Converters S Pin 1 S S G Features and Benefits Low RDS(ON) – ensures on state losses are minimized Excellent Qgd x RDS(ON) Product (FOM) Advanced Technology for DC/DC converts Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100% UIS (Avalanche) rated Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: POWERDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (approximate) D D D D D Bottom View Top View G S Equivalent Circuit Ordering Information (Note 4) N...