BAR67-04

Silicon PIN Diode For low loss RF switches and attenuators Very low capacitance at zero volt reverse bias at frequencies above 1 GHz (typ. 0.25 pF) Low forward resistance (typ. 1.5 Ω @ 5mA) Low harmonics Pb-free (RoHS compliant) package BAR67... BAR67-02V BAR67-04 !  , ,  Type BAR67-02V BAR67-04 Package SC79 SOT23 Configuration single series LS(nH) 0.6 1.8 Marking T PMs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation TS ≤ 118°C, BAR67-02V TS ≤ 25°C, BAR67-04 VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Value 150 200 250 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Thermal Resistance Parameter Junction - soldering point1) BAR67-02V BAR67-04 Symbol RthJS Value ≤ 115 ≤ 290 Unit K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance 1 2011-06-14 BAR67... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 100 V Forward voltage IF = 50 mA V(BR) IR VF 150 - -V - - 20 nA - 0.95 1.2 V AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz CT pF - 0.35 0.55 - 0.35 0.9 - 0.25 - 0.23 - Reverse parallel resistance VR = 0 V, f = 100 MHz VR = 0 V, f = 1 GHz VR = 0 V, f = 1.8 GHz F...