BAR90-02EL

Silicon Deep Trench PIN Diodes Optimized for low bias current antenna switches in hand held applications Very low capacitance at zero volt reverse bias at frequencies above 1GHz (typ. 0.19 pF) Low forward resistance (typ. 1.3 Ω @ IF = 3 mA) Improved ON / OFF mode harmonic distortion balance Pb-free (RoHS compliant) package BAR90... BAR90-02EL BAR90-02ELS 12 BAR90-098LRH 4 D1 3 D2 12 Type BAR90-02ELS BAR90-02EL BAR90-098LRH Package TSSLP-2-3 TSLP-2-19 TSLP-4-7 * Marking of TSSLP-2-3 with underline Configuration single, leadless single, leadless anti-parallel pair, leadless LS(nH) 0.2 0.4 0.4 Marking J* X T9 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation TS ≤ 137 °C, BAR90-02ELS TS ≤ 133°C, all others VR IF Ptot Junction temperature Operating temperature range Storage temperature Tj Top Tstg Value 80 100 150 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C 1 2013-06-10 BAR90... Thermal Resistance Parameter Junction - soldering point1) BAR90-02ELS All others Symbol RthJS Value ≤ 90 ≤ 65 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Breakdown voltage I(BR) = 5 µA Reverse current VR = 60 V Forward voltage IF = 3 mA IF = 100 mA V(BR) IR VF 80 - - - - 50 0.75 0.81 0.87 - 0.9 1 Unit V nA V 1For calculation of RthJA please refer to Application Note AN077 (Therm...