Silicon Tuning Diode
Silicon Tuning Diode • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile...
Description
Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment Pb-free (RoHS compliant) package
BBY51...
BBY51-02L BBY51-02V BBY51-02W BBY51-03W
BBY51
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Type BBY51 BBY51-02L BBY51-02V BBY51-02W* BBY51-03W
* Not for new design
Package
SOT23 TSLP-2-1 SC79 SCD80 SOD323
Configuration
common cathode single, leadless single single single
Marking
S3s II f II white H
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Forward current Operating temperature range Storage temperature
VR IF Top Tstg
Value 7 20
-55 ...125 -55 ...150
Unit V mA °C
1 2014-02-11
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Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Unit
Reverse current
VR = 6 V VR = 6 V, TA = 85 °C
IR nA - - 10
- - 200
AC Characteristics Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7
Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHZ
CT1/CT4 1.55 1.75 2.2 C1V-C3V 1.4 1.78 2.2 pF C3V-C4V 0.3 0.5 0.7
Series resistance VR = 1 V, f = 1 GHz
rS - 0.37 - Ω
2 2014-02-11
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Diode capacitance CT = ƒ (VR) f = 1MHz
10 C T pF
8
EHD07128
Temperature coefficient of the diode ...
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