BBY51-02V

Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment Pb-free (RoHS compliant) package BBY51... BBY51-02L BBY51-02V BBY51-02W BBY51-03W  BBY51 ! , ,  Type BBY51 BBY51-02L BBY51-02V BBY51-02W* BBY51-03W * Not for new design Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 Configuration common cathode single, leadless single single single Marking S3s II f II white H Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top Tstg Value 7 20 -55 ...125 -55 ...150 Unit V mA °C 1 2014-02-11 BBY51... Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Unit Reverse current VR = 6 V VR = 6 V, TA = 85 °C IR nA - - 10 - - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 5.05 5.4 5.75 3.4 4.2 5.2 2.7 3.5 4.6 2.5 3.1 3.7 Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference VR = 1 V, VR = 3 V, f = 1 MHZ Capacitance difference VR = 3 V, VR = 4 V, f = 1 MHZ CT1/CT4 1.55 1.75 2.2 C1V-C3V 1.4 1.78 2.2 pF C3V-C4V 0.3 0.5 0.7 Series resistance VR = 1 V, f = 1 GHz rS - 0.37 - Ω 2 2014-02-11 BBY51... Diode capacitance CT = ƒ (VR) f = 1MHz 10 C T pF 8 EHD07128 Temperature coefficient of the diode ...