Silicon Tuning Diodes
Silicon Tuning Diodes • Ηigh Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO`s in mobil...
Description
Silicon Tuning Diodes Ηigh Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO`s in mobile communications equipment Pb-free (RoHS compliant) package
BBY52...
BBY52-02L BBY52-02W
Type BBY52-02L BBY52-02W
Package TSLP-2-1 SCD80
Configuration single, leadless single
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage Forward current Operating temperature range Storage temperature
VR IF Top Tstg
LS(nH) 0.4
0.6
Marking K KK
Value 7 20
-55 ... 150 -55 ... 150
Unit V mA °C
1 2011-06-14
BBY52...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Reverse current
VR = 6 V VR = 6 V, TA = 85 °C
IR - - 10
- - 200
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
CT 1.4 1.85 2.2
0.95 1.5
2
0.9 1.35 1.75
0.85 1.15 1.45
Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz
CT1/CT4 rS
1.1 1.6 2.1 - 0.9 1.7
Unit nA pF
Ω
2 2011-06-14
BBY52...
CT IR
Diode capacitance CT = ƒ (VR) f = 1MHz
2.6 pF
2.4 2.3 2.2 2.1
2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1
10 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 V 4
VR
Reverse current IR = ƒ(VR) TA = 25°C
45 pA
35 30 25 20 15 10
5 00 1 2 3 4 5 V 7
VR
3 2011-06-14
Package SCD80
Package Outline
0.8 ±0.1 2
Cathode marking
1 0.3 ±0.05
1.7 ±0.1 10˚MAX.
0.2 M A
0.13
+0.05 -0.03
A
7˚ ...
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