BBY53-02L

Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation for VCO's in mobile communications equipment High ratio at low reverse voltage Pb-free (RoHS compliant) package BBY53... BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53 BBY53-05W !  , ,  Type BBY53 BBY53-02L BBY53-02V BBY53-02W BBY53-03W BBY53-05W Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 SOT323 Configuration common cathode single, leadless single single single common cathode Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top Tstg LS(nH) 2 0.4 0.6 0.6 1.8 1.4 Marking S7s LL L LL white 5 S7s Value 6 20 -55 ... 125 -55 ... 150 Unit V mA °C 1 2011-06-15 BBY53... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 4 V VR = 4 V, TA = 85 °C IR - - 10 - - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Series resistance VR = 1 V, f = 1 GHz CT CT1/CT3 4.8 5.3 5.8 1.85 2.4 3.1 1.8 2.2 2.6 rS - 0.47 - Unit nA pF Ω 2 2011-06-15 TCC CT ∆CT BBY53... Diode capacitance CT = ƒ (VR) f = 1MHz Capacitance change ∆C = ƒ(TA) f = 1 MHz 10 pF 8 7 6 5 4 3 2 1 00 0.5 1 1.5 2 V 3 VR Temperature coefficient of the diode capacitance TCC = ƒ (VR) f = 1 MHz 10 -2 ...