BBY57-02L

Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation for VCO's in mobile communications equipment For control elements such as TCXOs and VCXOs Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BBY57... BBY57-02L BBY57-02V BBY57-02W  BBY57-05W ! , ,  Type BBY57-02L BBY57-02V BBY57-02W BBY57-05W Package TSLP-2 SC79 SCD80 SOT323 Configuration single single single common cathode Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Forward current IF Operating temperature range Top Storage temperature Tstg 1Pb-containing package may be available upon special request LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Value 10 20 -55 ... 125 -55 ... 150 Unit V mA °C 1 2007-04-20 BBY57... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C IR nA - - 10 - - 100 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 16.5 17.5 18.6 - 9.35 - 74 4.7 5.5 Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz, BBY57-02L VR = 1 V, f = 470 MHz, all others CT1/CT3 CT1/CT4 rS - 2.45 - 3 3.7 4.5 Ω - 0.35 - 0.3 - ...