Silicon Tuning Diode
Silicon Tuning Diode • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • High capacitance ...
Description
Silicon Tuning Diode Excellent linearity High Q hyperabrupt tuning diode Low series resistance High capacitance ratio Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For control elements such as TCXOs and VCXOs Pb-free (RoHS compliant) package1) Qualified according AEC Q101
BBY57...
BBY57-02L BBY57-02V BBY57-02W
BBY57-05W
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Type BBY57-02L BBY57-02V BBY57-02W BBY57-05W
Package TSLP-2 SC79 SCD80 SOT323
Configuration single single single common cathode
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH) 0.4 0.6 0.6 1.4
Marking 55 5 55 D5s
Value 10 20
-55 ... 125 -55 ... 150
Unit V mA °C
1 2007-04-20
BBY57...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 8 V VR = 8 V, TA = 85 °C
IR nA - - 10 - - 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz
CT pF 16.5 17.5 18.6 - 9.35 - 74 4.7 5.5
Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz, BBY57-02L VR = 1 V, f = 470 MHz, all others
CT1/CT3 CT1/CT4 rS
- 2.45 -
3 3.7 4.5
Ω - 0.35 - 0.3 -
...
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