Silicon Tuning Diode
Silicon Tuning Diodes • Excellent linearity • High Q hyperabrupt tuning diode • Low series resistance • Designed for low...
Description
Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation
for VCO's in mobile communications equipment
For low frequency control elements such as TCXOs and VCXOs
Very low capacitance spread Pb-free (RoHS compliant) package1) Qualified according AEC Q101
BBY58...
BBY58-02L/V BBY58-02W BBY58-03W
BBY58-05W
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BBY58-06W
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Type BBY58-02L BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W
Package TSLP-2-1 SC79 SCD80 SOD323 SOT323 SOT323
Configuration single, leadless single single single common cathode common anode
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH) 0.4 0.6 0.6 0.6 1.4 1.4
Marking 88 8 88 8 yel. B5s B6s
Value 10 20
-55 ... 150 -55 ... 150
Unit V mA °C
1 2007-09-19
BBY58...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current VR = 8 V VR = 8 V, TA = 85 °C
IR nA - - 10 - - 100
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 6 V, f = 1 MHz
CT pF 17.5 18.3 19.3 11.4 12.35 13.3 7.8 8.6 9.3 5.5 6 6.6 3.8 4.7 5.5
Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance rat...
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