BBY58-03W

Silicon Tuning Diodes Excellent linearity High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation for VCO's in mobile communications equipment For low frequency control elements such as TCXOs and VCXOs Very low capacitance spread Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BBY58... BBY58-02L/V BBY58-02W BBY58-03W  BBY58-05W ! , ,  BBY58-06W ! , ,  Type BBY58-02L BBY58-02V BBY58-02W BBY58-03W BBY58-05W BBY58-06W Package TSLP-2-1 SC79 SCD80 SOD323 SOT323 SOT323 Configuration single, leadless single single single common cathode common anode Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Forward current IF Operating temperature range Top Storage temperature Tstg 1Pb-containing package may be available upon special request LS(nH) 0.4 0.6 0.6 0.6 1.4 1.4 Marking 88 8 88 8 yel. B5s B6s Value 10 20 -55 ... 150 -55 ... 150 Unit V mA °C 1 2007-09-19 BBY58... Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C IR nA - - 10 - - 100 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 6 V, f = 1 MHz CT pF 17.5 18.3 19.3 11.4 12.35 13.3 7.8 8.6 9.3 5.5 6 6.6 3.8 4.7 5.5 Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance rat...