Silicon Tuning Diodes
Silicon Tuning Diodes • High capacitance ratio • High Q hyperabrupt tuning diode • Low series resistance • Designed for ...
Description
Silicon Tuning Diodes High capacitance ratio High Q hyperabrupt tuning diode Low series resistance Designed for low tuning voltage operation
for VCO's in mobile communications equipment
Very low capacitance spread Pb-free (RoHS compliant) package1) Qualified according AEC Q101
BBY66...
BBY66-02V
BBY66-05 BBY66-05W
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, ,
Type BBY66-02V BBY66-05 BBY66-05W
Package SC79 SOT23 SOT323
Configuration single common cathode common cathode
**For differences see next page Capacitance groups
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Diode reverse voltage
VR
Forward current
IF
Operating temperature range
Top
Storage temperature
Tstg
1Pb-containing package may be available upon special request
LS(nH) 0.6 1.8 1.4
Marking h O1s / O2s** OBs
Value 12 50
-55 ... 150 -55 ... 150
Unit V mA °C
1 2007-04-20
BBY66...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Reverse current
VR = 10 V VR = 10 V, TA = 65 °C
IR nA - - 20 - - 200
AC Characteristics Diode capacitance1)
VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.5 V, f = 1 MHz
CT pF 66 68.7 71.5 33 35.4 38 19.7 20.95 22.2 12 12.7 13.5
Capacitance ratio
CT1/CT4.5
VR = 1 V, VR = 4.5 V
Series resistance VR = 1 V, f = 470 MHz
rS
1Capacitance groups at 1V, coded 01; 02 (only BBY66-05)
CT/groups
01 02
C1V min
66pF 68.5pF
C1V max
69pF 71.5pF
Deliveries c...
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