2N6027

2N6027 2N6028 SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characteristics such as Valley Current (IV), Peak Current (IP), and Intrinsic Standoff Ratio (). TO-92 CASE MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) Gate-Cathode Forward Voltage Gate-Cathode Reverse Voltage Gate-Anode Reverse Voltage Anode-Cathode Voltage Peak Non-Repetitive Forward Current (t=10μs) Peak Repetitive Forward Current (t=20μs, D.C.=1.0%) Peak Repetitive Forward Current (t=100μs, D.C.=1.0%) DC Forward Anode Current DC Gate Current Power Dissipation Operating Junction Temperature Storage Temperature SYMBOL VGKF VGKR VGAR VAK ITSM ITRM ITRM IT IG PD TJ Tstg ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N6027 SYMBOL TEST CONDITIONS MIN MAX IGAO VS=40V - 10 IGKS VS=40V - 50 IP VS=10V, RG=1.0M - 2.0 IP VS=10V, RG=10k - 5.0 IV VS=10V, RG=1.0M - 50 IV VS=10V, RG=10k 70 - IV VS=10V, RG=200 1.5 - VT VS=10V, RG=1.0M 0.2 1.6 VT VS=10V, RG=10k 0.2 0.6 VF IF=50mA - 1.5 VO VB=20V, CC=0.2μF 6.0 - tr VB=20V, CC=0.2μF - 80 40 5.0 40 40 5.0 2.0 1.0 150 50 300 -50 to +100 -55 to +150 2N6028 MIN MAX - 10 - 50 - 0.15 - 1.0 - 25 25 1.0 0.2 0.6 0.2 0.6 - 1.5 6.0 - 80 UNITS V V V V A A A mA mA mW °C °C UNITS nA nA μA μA μA μA mA V ...