CSDD-25M

CSDD-25M CSDD-25N SURFACE MOUNT SILICON CONTROLLED RECTIFIER 25 AMP, 600 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CSDD-25M series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MARKING: FULL PART NUMBER D2PAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) Peak Repetitive Off-State Voltage RMS On-State Current (TC=90°C) Peak Non-Repetitive Surge Current, t=8.3ms Peak Non-Repetitive Surge Current, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=10μs Average Gate Power Dissipation Peak Forward Gate Current, tp=10μs Peak Forward Gate Voltage, tp=10μs Peak Reverse Gate Voltage, tp=10μs Critical Rate of Rise of On-State Current Operating Junction Temperature Storage Temperature Thermal Resistance Thermal Resistance SYMBOL CSDD-25M CSDD-25N VDRM, VRRM IT(RMS) ITSM ITSM I2t 600 800 25 260 250 310 PGM PG(AV) IFGM VFGM VRGM di/dt 40 1.0 4.0 16 5.0 100 TJ -40 to +125 Tstg -40 to +150 ΘJA 60 ΘJC 1.3 UNITS V A A A A2s W W A V V A/μs °C °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt Rated VDRM, VRRM Rated VDRM, VRRM, TC=125°C VD=12V, RL=10Ω IT=100mA VD=12V, RL=10Ω ITM=50A, tp=380μs VD=2/3 VDRM, TC=125°C 10 μA 4.0 mA 4.2 30 mA 12.5 50 mA 0.65 1.50 V 1.80 V 200 V/μs R2 (17-February 2010) CSDD-25M CSDD-25N SURFACE MOUNT SI...