K1153 Data Sheet PDF | Hitachi Semiconductor





(Datasheet) K1153 PDF Download

Part Number K1153
Description 2SK1153
Manufacture Hitachi Semiconductor
Total Page 9 Pages
PDF Download Download K1153 Datasheet PDF

Features: 2SK1153, 2SK1154 Silicon N-Channel MOS F ET Application High speed power switchi ng Features • Low on-resistance • H igh speed switching • Low drive curre nt • No secondary breakdown • Suita ble for switching regulator and DC-DC c onverter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK11 53, 2SK1154 Absolute Maximum Ratings ( Ta = 25°C) Item Drain to source volt age 2SK1153 2SK1154 Gate to source v oltage Drain current Drain peak curre nt Body to drain diode reverse drain c urrent Channel dissipation Channel te mperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS I D I *1 D(pulse) I DR Pch*2 Tch Tstg Ra tings 450 500 ±30 3 12 3 30 150 –55 to +150 Unit V V A A A W °C °C 2 2 SK1153, 2SK1154 Electrical Characteris tics (Ta = 25°C) Item Symbol Min Dr ain to source breakdown voltage 2SK115 3 V(BR)DSS 2SK1154 450 500 Gate to so urce breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate vo.

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K1153 datasheet
2SK1153, 2SK1154
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S

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