K1153

2SK1153, 2SK1154 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 2SK1153, 2SK1154 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK1153 2SK1154 Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I *1 D(pulse) I DR Pch*2 Tch Tstg Ratings 450 500 ±30 3 12 3 30 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1153, 2SK1154 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage 2SK1153 V(BR)DSS 2SK1154 450 500 Gate to source breakdown voltage V(BR)GSS ±30 Gate to source leak current I GSS Zero gate voltage 2SK1153 IDSS drain current 2SK1154 — — Gate to source cutoff voltage VGS(off) Static Drain to source 2SK1153 RDS(on) on stateresistance 2SK1154 2.0 — — Forward transfer admittance |yfs| 1.5 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage t d(on) tr t d(off) tf VDF — — — — — Body to drain diode reverse recovery time t rr — Note: 1. Pulse te...