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MPS4250 Dataheets PDF



Part Number MPS4250
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description PNP Transistor
Datasheet MPS4250 DatasheetMPS4250 Datasheet (PDF)

MPS4250 Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCES VCBO VEBO IC PD −40 −40 −40 −5.0 −50 625 5.0 Vdc Vdc Vdc Vdc mAdc W mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Tempe.

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MPS4250 Transistor PNP Silicon Features • This is a Pb−Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCES VCBO VEBO IC PD −40 −40 −40 −5.0 −50 625 5.0 Vdc Vdc Vdc Vdc mAdc W mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER 123 STRAIGHT LEAD BULK PACK 12 3 TO−92 1 WATT (TO−226) CASE 29−10 STYLE 1 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM MPS 4250 AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 August, 2010 − Rev. 5 1 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MPS4250G TO−92 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MPS4250/D MPS4250 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −5.0 mA) Collector −Emitter Sustaining Voltage (Note 1) (IC = −5.0) Collector −Base Breakdown Voltage (IC = −10 mA) Emitter −Base Breakdown Voltage (IE = −10 mA) Collector Cutoff Current (VCB = −50 V) (VCB = −40 V, TA = 65°C) Emitter Cutoff Current (VEB = −3.0 V) ON CHARACTERISTICS DC Current Gain (IC = −1.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) Collector −Emitter Saturation Voltage (Note 1) (IC = −10 mA, IB = −0.5 mA) Base −Emitter Saturation Voltage (Note 1) (IC = −10 mA, IB = −0.5 mA) SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = −5.0 V, f = 1.0 MHz) Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Small−Signal Current Gain (IC = −1.0 mA, VCE = −5.0 V, f = 1.0 kHz) (IC = −0.5 mA, VCE = −5.0 V, f = 20 MHz) Noise Figure (IC = −20 mA, VCE = −5.0 V, RS = 10 kW, f = 1.0 kHz, PBW = 150 Hz) (IC = −250 mA, VCE = −5.0 V, RS = 1.0 kW, f = 1.0 kHz, PBW = 150 Hz) 1. Pulse Test: Pulse Width = 300 ms; Duty Cycle = 2.0%. Symbol V(BR)CES V(BR)CEO(sus) V(BR)CBO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) Cobo Cibo hfe NF Min −40 −40 −40 −5.0 − − − 250 250 − − − − 250 2.0 − − Max − − − − −10 −3.0 −20 Unit Vdc Vdc Vdc Vdc nA mA nA − − −0.25 −0.9 − Vdc Vdc 6.0 pF 16 pF − 800 − dB 2.0 2.0 http://onsemi.com 2 MPS4250 PACKAGE DIMENSIONS A R F B P L K XX H V G C 1 N N A R P T SEATING PLANE B K XX G V 1 C N TO−92 (TO−226) 1 WATT CASE 29−10 ISSUE O STRAIGHT LEAD BULK PACK D J SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DI­ MENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. INCHES DIM MIN MAX A 0.175 0.205 B 0.290 0.310 C 0.125 0.165 D 0.018 0.021 F 0.016 0.019 G 0.045 0.055 H 0.095 0.105 J 0.018 0.024 K 0.500 --L 0.250 --N 0.080 0.105 P --- 0.100 R 0.135 --V 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --- 2.54 3.43 --3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR BENT LEAD TAPE & REEL AMMO PACK D J SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN DIMENSIONS P AND L. DIMENSIONS D AND J APPLY BETWEEN DIMENSIONS L AND K MINIMUM. THE LEAD DIMENSIONS ARE UNCONTROLLED IN DIMENSION P AND BEYOND DIMENSION K MINIMUM. INCHES DIM MIN MAX A 0.175 0.205 B 0.290 0.310 C 0.125 0.165 D 0.018 0.021 G 0.094 0.102 J 0.018 0.024 K 0.500 --N 0.080 0.105 P --- 0.100 R 0.135 --V 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.53 2.40 2.80 0.46 0.61 12.70 --2.04 2.66 --- 2.54 3.43 --3.43 --- ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make .


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