PowerTrench MOSFET. FDMS7698 Datasheet

FDMS7698 Datasheet PDF, Equivalent


Part Number

FDMS7698

Description

N-Channel PowerTrench MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS7698 Datasheet


FDMS7698 Datasheet
FDMS7698
N-Channel PowerTrench® MOSFET
30 V, 22 A, 10 mΩ
Features
„ Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A
„ Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
October 2014
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ IMVP Vcore Switching for Notebook
„ VRM Vcore Switching for Desktop and server
„ OringFET / Load Switching
„ DC-DC Conversion
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
30
±20
22
44
13.5
50
29
29
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.4
50
°C/W
Device Marking
FDMS7698
Device
FDMS7698
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C2
1
www.fairchildsemi.com

FDMS7698 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
16 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 13.5 A
VGS = 4.5 V, ID = 11.0 A
VGS = 10 V, ID = 13.5 A
TJ = 125 °C
VDS = 5 V, ID = 13.5 A
1.0 2.0 3.0
V
-6 mV/°C
8.1 10
12.2 15 mΩ
11 14
53 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1205 1605 pF
370 495 pF
35 55 pF
0.3 1.6 3.2
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 13.5 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 13.5 A
9 18 ns
3 10 ns
20 36 ns
3 10 ns
17 24 nC
7.5 12 nC
3.9 nC
2.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 13.5 A
(Note 2)
(Note 2)
0.75 1.1
0.86 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13.5 A, di/dt = 100 A/μs
24 38 ns
8 15 nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 13.5 A, di/dt = 300 A/μs
19 34 ns
13 24 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted
on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C2
2
www.fairchildsemi.com


Features Datasheet pdf FDMS7698 N-Channel PowerTrench® MOSFET FDMS7698 N-Channel PowerTrench® MOSFE T 30 V, 22 A, 10 mΩ Features „ Max rD S(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A „ Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A „ Advanced Package and Silicon combination for low rDS(on) an d high efficiency „ Next generation en hanced body diode technology, engineere d for soft recovery „ MSL1 robust pack age design „ 100% UIL tested „ RoHS C ompliant October 2014 General Descript ion This N-Channel MOSFET has been desi gned specifically to improve the overal l efficiency and to minimize switch nod e ringing of DC/DC converters using eit her synchronous or conventional switchi ng PWM controllers. It has been optimiz ed for low gate charge, low rDS(on), fa st switching speed and body diode rever se recovery performance. Applications IMVP Vcore Switching for Notebook „ VRM Vcore Switching for Desktop and ser ver „ OringFET / Load Switching „ DC- DC Conversion Top Bottom Pin 1 S S S G D5 D6 4G 3S D D D D Power 56 MOSF.
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