WNM4001

WNM4001 Small Signal N-Channel, 20V, 0.5A, MOSFET V(BR)DSS 20 V RDS(on) Max. 0.7ȍ@ 4.5V 0.85ȍ@ 2.5V 1.25ȍ@ 1.8V ID MAX 0.5A 0.3A 0.1A Descriptions The WNM4001 is the N-Channel enhancement MOS Field Effect Transistor, uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in small signal switch. Standard product WNM4001 is Pb-free. Features z Trench N-Channel z Supper high density cell design for extremely low Rds(on) z Exceptional ON resistance and maximum DC current capability z Small package design with SOT-523 WNM4001 Http://www.willsemi.com Top D 3 12 GS SOT-523 D 3 12 GS Pin Configuration 3 N3 * 12 N3 = Device Code * = Month Marking Applications z Driver: Relays, Solenoids, Lamps, Hammers z Power supply converters circuit z Load/Power Switching for potable device Order Information Device Package WNM4001-3/TR SOT-523 Shipping 3000/Tape&Reel Will Semiconductor Ltd. 1 Nov, 2011 - Rev. 1.3 Absolute Maximum Ratings (TA=25oC unless otherwise noted) Symbol VDSS VGSS ID PD TJ TSG Parameter Drain-to-Source Voltage Gate-to-Source Voltage
Drain Current – Continue Note1 Drain Current – Pulsed (t<300us, Duty<2%) Note1 Power Dissipation – Note1 Operation junction temperature range Storage temperature range Thermal Resistance Ratings (TA=25oC unless otherwise noted) Symbol RTJA Parameter Thermal Resistance, Junction to Ambient – Note1 Note1: Surface mounted on a 2 OZ copper, 1 in2 pad, FR-4 b...