2N4923G

2N4921G, 2N4922G, 2N4923G Medium-Power Plastic NPN Silicon Transistors These high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features Low Saturation Voltage Excellent Power Dissipation Excellent Safe Operating Area Complement to PNP 2N4920G These Devices are Pb−Free and are RoHS Compliant** MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage 2N4921G 2N4922G 2N4923G VCEO Vdc 40 60 80 Collector−Emitter Voltage 2N4921G 2N4922G 2N4923G VCB Vdc 40 60 80 Emitter Base Voltage VEB Collector Current − Continuous (Note 1) IC Collector Current − Peak (Note 1) ICM Base Current − Continuous IB Total Power Dissipation PD @ TC = 25_C Derate above 25_C 5.0 Vdc 1.0 Adc 3.0 Adc 1.0 Adc 30 W 0.24 mW/_C Operating and Storage Junction Temperature Range TJ, Tstg –65 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements. The 3.0 A maximum value is based upon actual current handling capability of the device (see Figures 5 and 6). THERMAL CHARACTERISTICS (Note 2) Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 4.16 _C/W 2. Recommend use of thermal compound for lowest thermal resistance. *Indicates JE...