BAT54S

SEMICONDUCTOR TECHNICAL DATA For high speed Switching. FEATURES Low Forward Voltage. Low Leakage Current. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Average Forward Current Non-repetitive Peak Forward Surge Current (t<1.0s) Repetitive Peak Forward Current Power Dissipation Junction Temperature Storage Temperature SYMBOL VR IO RATING 30 0.2 UNIT V A IFSM 0.6 A IFRM PD Tj Tstg 0.3 0.2 125 -55 150 A W BAT54S SCHOTTKY BARRIER TYPE DIODE E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. CATHODE 1 2. ANODE 2 3. ANODE 1/CATHODE 2 3 D2 D1 21 SOT-23 Marking L44Type Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VF IR CT trr TEST CONDITION IF=1.0mA IF=10mA IF=30mA IF=100mA VR=25V VR=1V, f=1MHz IR=IF=10mA MIN. - TYP. - MAX. 0.32 0.40 0.50 0.80 2 10 5 UNIT V V V V A pF ns 2014 .7. 03 Revision No : 1 1/1 FORWARD CURRENT IF (mA) BAT54S 1000 100 10 IF - VF 150 C 125 C 75 C 1 25 C -25 C 0.1 0.01 0.001 0 100 200 300 400 500 600 700 FORWARD VOLTAGE VF (mV) REVERSE CURRENT IR (nA) 1000000 100000 10000 1000 100 10 1 0 I R - VR 125 C 75 C 25 C -25 C 10 20 30 REVERSE VOLTAGE VR (V) 40 CT - VR 100 f =1MHz 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) COLLECT...