SILICON EPITAXIAL PLANAR DIODE
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES Small Package : SOT-23(1).
MAXIMUM RATING ...
Description
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION
FEATURES Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
VR 80
IF 100
IFSM
1
PD 225*
Tj 150
Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V mA A mW
BAV70C
SILICON EPITAXIAL PLANAR DIODE
A G
D
E L BL
23 1
M 1. ANODE 1 2. ANODE 2 3. CATHODE
DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10
3
21
SOT-23(1)
C N K J
Marking
Type Name
H7C
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Forward Voltage
Reverse Current Total Capacitance
VR VF(1) VF(2) VF(3)
IR CT
TEST CONDITION IR=100uA IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz
MIN. 80 -
TYP. -
0.59 0.72
2
MAX. -
0.65 0.8 1.0 1 3
UNIT V
V
A pF
2015. 5. 12
Revision No : 0
1/2
FORWARD CURRENT I F (mA)
BAV70C
IF - VF
3
10
2
10 10
C C
TaTa=-=2255
Ta=100 C
1
-1
10
-2
10 0
0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF (V)
1.2
2.5 2.0 1.5 1.0 0.5
0 0.2
CT - VR
f=1MHz Ta=25 C
1
3 10
30 100 200
REVERSE VOLTAGE VR (V)
REVERSE CURRENT IR (µA)
I R - VR
10
Ta=100 C 1
Ta=75 C
-1
10 Ta=50 C
-2
10 Ta=25 C
-3
10 0
20 40 60 80 REVERSE VOLTAGE VR (V)
TOTAL CAPACITANCE C T (pF)
2015. 5. 12
Revision No : ...
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