KTC4379

30Ω J B EU SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) PC=1 2W (Mounted on Ceramic Substrate) Small Flat Package. Complementary to KTA1666. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC * Tj 50 50 5 2 0.4 500 1 150 Storage Temperature Range Tstg -55 150 PC* : KTC4379 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V A A mW W KTC4379 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX 1.50+_ 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER SOT-89 Marking hFE Rank Type Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO V(BR)CEO hFE (1) (Note2) hFE (2) VCE(sat) VBE(sat) fT Cob VCB=50V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=0.5A (Note 1) VCE=2V, IC=1.5A (Note 1) IC=1A, IB=0.05A (Note 1) IC=1A, IB=0.05A (Note 1) VCE=2...