SEMICONDUCTOR
TECHNICAL DATA
KTC5027F
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWIT...
SEMICONDUCTOR
TECHNICAL DATA
KTC5027F
TRIPLE DIFFUSED
NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC Pulse
Base Current Collector Power Dissipation
(Tc=25 ) Junction Temperature
Storage Temperature Range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
RATING 1100 800 7 3 10 1.5
40
150 -55 150
UNIT V V V
A
A W
K
A S
E
LL M
DD
NN
J
GF B P
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5 R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
Q
1. BASE 2. COLLECTOR 3. EMITTER
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current Emitter Cut-off Current
Collector-Emitter Sustaning Voltage
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
DC Current Gain
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency
ICBO IEBO
VCEX(SUS)
VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) BVCBO BVCEO BVEBO
Cob fT
VCB=800V, IE=0 VEB=5V, IC=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=1...