KTC5027

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE AND HIGH RELIABILITY HIGH SPEED SWITCHING, WIDE SOA KTC5027 TRIPLE DIFFUSED NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current DC Pulse IC ICP Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature IB PC Tj Storage Temperature Range Tstg RATING 1100 800 7 3 10 1.5 50 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaning Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Output Capacitance Transition Frequency ICBO IEBO VCEX(SUS) VCE(sat) VBE(sat) hFE (1) (Note) hFE (2) BVCBO BVCEO BVEBO Cob fT VCB=800V, IE=0 VEB=5V, IC=0 IC=1.5A, IB1=-IB2=0.3A L=2mH, Clamped IC=1.5A, IB=0.3A IC=1.5A, IB=0.3A VCE=5V, IC=0.2A VCE=5V, IC=1A IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 VCB=10V, f=1MHz, IE=0 VCE=10V, IC=0.2A Turn On Time ton Switching Time Storage Time tstg Fall Time tf Note : hFE (1) Classification R:15 30, O:20 40 2008. 3. 26 Revision No : 1 MIN. - TYP. - MAX. 10 10 UNIT A A 800 - - V 15 8 1100 800 7 - 60 15 2V 1.5 V 40 -V -V -V - pF - MHz - - 0.5 --3 S - - 0.3 1/3 KTC5027 2008. 3. 26 Revision ...