KTC801E

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A super-minimold package houses 2 transistor. Excellent temperature response between these 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. KTC801E EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC * Tj Storage Temperature Range * Total Rating Tstg RATING 60 50 5 150 30 200 150 -55 150 UNIT V V V mA mA mW EQUIVALENT CIRCUIT (TOP VIEW) ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE (Note) VCE(sat) fT Cob VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 VCE=10V, IC=1 VCB=10V, IE=0, f=1 Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 Note : hFE Classification Y(4):120 240, GR(6):200 400 Marking MIN. - 120 80 - TYP. MAX. UNIT. - 0.1 - 0.1 - 400 0.1 0.30 V -- 2 3.5 1.0 10 2014. 3. 31 Revision No : 3 1/3 KTC801E 2014. 3. 31 Revision No : 3 2/3 KTC801E 2014. 3. 31 Revision No : 3 3/3 ...