KTC811T

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA. Complementary to KTA711T. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC * Tj 35 30 5 500 -500 0.9 150 Storage Temperature Range Tstg -55 150 * Package mounted on a ceramic board (600 0.8 ) UNIT V V V mA mA W A F GG KTC811T EPITAXIAL PLANAR NPN TRANSISTOR E K BK 16 25 34 H JJ 1. Q1 EMITTER 2. Q1 BASE 3. Q2 COLLECTOR 4. Q2 EMITTER 5. Q2 BASE 6. Q1 COLLECTOR I D DIM A B C D E F G H I J K L MILLIMETERS 2.9+_ 0.2 1.6+0.2/-0.1 0.70+_ 0.05 0.4+_ 0.1 2.8+0.2/-0.3 1.9+_ 0.2 0.95 0.16+_ 0.05 0.00-0.10 0.25+0.25/-0.15 0.60 0.55 C L TS6 EQUIVALENT CIRCUIT (TOP VIEW) 65 4 Q1 Q2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ICBO IEBO hFE(1) (Note) hFE(2) (Note) VCE(sat) VBE fT Collector Output Capacitance Cob Note : hFE(1) Classification 0:70 140, Y:120 240 hFE(2) Classification 0:25Min., Y:40Min. TEST CONDITION VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=6V, IC=20mA VCB=6V, IE=0, f=1MHz 1 MIN. 70 25 - Marking hFE Rank ...