2N5195G

2N5194G, 2N5195G Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N5194G 2N5195G VCEO 60 80 Vdc Collector−Base Voltage 2N5194G 2N5195G VCB Vdc 60 80 Emitter−Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEB 5.0 Vdc IC 4.0 Adc IB 1.0 Adc PD 40 W 320 W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +150 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Indicates JEDEC registered data. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol RqJC Max 3.12 Unit °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 15 1 http://onsemi.com 4 AMPERE POWER TRANSISTORS PNP SILICON 60 − 80 VOLTS COLLECTOR 2, 4 3 BASE 1 EMITTER 123 TO−225 CASE 77−09 STYLE 1 MARKING DIAGRAM YWW 2 N519xG Y WW 2N519x G = Year = Work Week = Device Code x = 4 o...