2N6038G

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V Epoxy Meets UL 94 V−0 @ 0.125 in These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage 2N6034G 2N6035G, 2N6038G 2N6036G, 2N6039G VCEO Vdc 40 60 80 Collector−Base Voltage 2N6034G 2N6035G, 2N6038G 2N6036G, 2N6039G VCBO Vdc 40 60 80 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipation @ TC = 25°C Derate above 25°C VEBO IC ICM IB PD 5.0 Vdc 4.0 Adc 8.0 Apk 100 mAdc 40 W 320 mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 W 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient Symbol RqJC RqJA Max 3.12 83.3 Unit °C/W °C/W *For additional information on our Pb−Free strategy and soldering details, please download the ON Se...