IRF7328PBF

lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿAvailable in Tape & Reel lÿ Lead-Free VDSS -30V PD - 95196A IRF7328PbF HEXFET® Power MOSFET RDS(on) max 21mΩ@VGS = -10V 32mΩ@VGS = -4.5V ID -8.0A -6.8A Description New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications. S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Drain-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor VGS TJ , TSTG Gate-to-Source Voltage Junction and Storage Temperature Range Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient ƒ www.irf.com Max. -30 -8.0 -6.4 -32 2.0 1.3 16 ± 20 -55 to + 150 Units V A W W mW/°C V °C Max. 62.5 Units °C/W 1 12/03/10 IRF7328PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Dr...