Power MOSFET
VDS RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical) ID
(@TA = 25°C)
20 V
30 mΩ
45
13 nC
7.0 A
IRF7331...
Description
VDS RDS(on) max
(@VGS = 4.5V)
RDS(on) max
(@VGS = 2.5V)
Qg (typical) ID
(@TA = 25°C)
20 V
30 mΩ
45
13 nC
7.0 A
IRF7331TRPbF-1
HEXFET® Power MOSFET
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
SO-8
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number IRF7331PbF-1
Package Type SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRF7331TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL RθJA
Parameter Junction-to-Drain Lead Junction-to-Ambient
Max. 20 7.0 5.5 28 2.0 1.3 16 ± 12
-55 to + 150
Typ. ––– –––
Max. 42 62.5
Units V
A
W mW/°C
V °C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
IRF7331TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS ΔV(BR)DSS/ΔTJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-R...
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