IRF7404TRPBF-1

VDS RDS(on) max (@VGS = -4.5V) Qg ID (@TA = 25°C) -20 0.04 50 -6.7 V Ω nC A IRF7404TRPbF-1 HEXFET® Power MOSFET S1 S2 S3 G4 8 A D 7D 6D 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7404PbF-1 Package Type SO-8 Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRF7404TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Parameter 10 Sec. Pulsed Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. -7.7 -6.7 -5.4 -27 2.5 0.02 ± 12 -5.0 -55 to + 150 Units A W W/°C V V/ns °C Thermal Resistance Ratings RθJA Parameter Maximum Junction-to-Ambient„ Typ. ––– Max. 50 Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 16, 2014 IRF7404TRPbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Thr...