Power MOSFET
VDS RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
RDS(on) max
(@VGS = -1.8V)
Qg (typical) ID
(@TA = 25°C)
-12 V...
Description
VDS RDS(on) max
(@VGS = -4.5V)
RDS(on) max
(@VGS = -2.5V)
RDS(on) max
(@VGS = -1.8V)
Qg (typical) ID
(@TA = 25°C)
-12 V 7
9 mΩ
13 91 nC -16 A
Features Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
IRF7410TRPbF-1
S1 S2 S3 G4
HEXFET® Power MOSFET
8
A D
7D
6D
5D
Top View
SO-8
Benefits ⇒ Multi-Vendor Compatibility
Easier Manufacturing Environmentally Friendlier
Increased Reliability
Base Part Number IRF7410PbF-1
Package Type SO-8
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number IRF7410TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current
Power Dissipation
Power Dissipation Linear Derating Factor
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
Max. -12 -16 -13 -65 2.5 1.6 20 ±8 -55 to +150
Units V
A
W mW/°C
V °C
Thermal Resistance
RθJA
Parameter Maximum Junction-to-Ambient
Max. 50
Units °C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
October 16, 2014
IRF7410TRPbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Stati...
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