IRF7413PBF-1

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 30 0.011 52 13 V Ω nC A IRF7413PbF-1 S1 HEXFET® Power MOSFET AA 8D S2 7D S3 6D G4 5D Top View SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7413PbF-1 Package Type SO-8 Standard Pack Form Tube/Bulk Tape and Reel Quantity 95 4000 Orderable Part Number IRF7413PbF-1 IRF7413TRPbF-1 Absolute Maximum Ratings Symbol Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor dEAS Single Pulse Avalanche Energency dv/dt ePeak Diode Recovery dv/dt TJ, TSTG Junction and Storage Temperature Range Thermal Resistance Ratings Symbol Parameter RθJL Junction-to-Drain Lead gRθJA Junction-to-Ambient Max 30 ± 20 13 9.2 58 2.5 0.02 260 5.0 -55 to +150 Typ Max ––– 20 ––– 50 Units V A W mW/°C mJ V/ns °C Units °C/W 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 19, 2013 IRF7413PbF-1 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(...