DatasheetsPDF.com

IRF7456PBF-1 Dataheets PDF



Part Number IRF7456PBF-1
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF7456PBF-1 DatasheetIRF7456PBF-1 Datasheet (PDF)

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) SMPS MOSFET IRF7456PbF-1 20 0.0065 41 16 V Ω nC A HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendl.

  IRF7456PBF-1   IRF7456PBF-1



Document
VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) SMPS MOSFET IRF7456PbF-1 20 0.0065 41 16 V Ω nC A HEXFET® Power MOSFET S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7456PbF-1 Package Type SO-8 Standard Pack Form Tube/Bulk Tape and Reel Quantity 95 4000 Orderable Part Number IRF7456PbF-1 IRF7456TRPbF-1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Thermal Resistance RθJA Parameter Maximum Junction-to-Ambient„ Max. 20 ± 12 16 13 130 2.5 1.6 0.02 -55 to + 150 Max. 50 Units V V A W W W/°C °C Units °C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes  through „ are on page 8 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 IRF7456PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient 20 ––– ––– ––– 0.024 ––– ––– 0.00470.0065 RDS(on) Static Drain-to-Source On-Resistance ––– 0.00570.0075 ––– 0.011 0.020 VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current 0.6 ––– 2.0 ––– ––– 20 ––– ––– 100 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– 200 ––– ––– -200 V VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 1mA Ω VGS = 10V, ID = 16A ƒ VGS = 4.5V, ID = 13A ƒ VGS = 2.8V, ID = 3.5A ƒ V VDS = VGS, ID = 250μA μA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C nA VGS = 12V VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. gfs Forward Transconductance 44 ––– ––– Qg Total Gate Charge ––– 41 62 Qgs Gate-to-Source Charge ––– 9.7 15 Qgd Gate-to-Drain ("Miller") Charge ––– 18 27 td(on) Turn-On Delay Time ––– 20 ––– tr Rise Time ––– 25 ––– td(off) Turn-Off Delay Time ––– 50 ––– tf Fall Time ––– 52 ––– Ciss Input Capacitance ––– 3640 ––– Coss Output Capacitance ––– 1570 ––– Crss Reverse Transfer Capacitance ––– 330 ––– Units S nC ns pF Conditions VDS = 10V, ID = 16A ID = 16A VDS = 16V VGS = 5.0V, ƒ VDD = 10V ID = 1.0A RG = 6.0Ω VGS = 4.5V ƒ VGS = 0V VDS = 15V ƒ = 1.0MHz Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy‚ IAR Avalanche Current EAR Repetitive Avalanche Energ.


IRF7455PBF-1 IRF7456PBF-1 IRF7457PBF-1


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)