Document
VDS RDS(on) max
(@VGS = 10V)
Qg (typical) ID
(@TA = 25°C)
SMPS MOSFET
IRF7456PbF-1
20 0.0065
41 16
V Ω nC A
HEXFET® Power MOSFET
S1 S2 S3 G4
AA 8D 7D 6D 5D
Top View
SO-8
Applications l High Frequency DC-DC Converters with Synchronous Rectification
Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification
⇒
Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability
Base Part Number IRF7456PbF-1
Package Type SO-8
Standard Pack
Form Tube/Bulk Tape and Reel
Quantity 95
4000
Orderable Part Number
IRF7456PbF-1 IRF7456TRPbF-1
Absolute Maximum Ratings
Symbol
Parameter
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C
TJ , TSTG
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter Maximum Junction-to-Ambient
Max. 20 ± 12 16 13 130 2.5 1.6 0.02
-55 to + 150
Max. 50
Units V V
A
W W W/°C °C
Units °C/W
Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes through are on page 8
1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 20, 2013
IRF7456PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
20 ––– ––– ––– 0.024 ––– ––– 0.00470.0065
RDS(on)
Static Drain-to-Source On-Resistance ––– 0.00570.0075
––– 0.011 0.020
VGS(th) IDSS
Gate Threshold Voltage Drain-to-Source Leakage Current
0.6 ––– 2.0 ––– ––– 20 ––– ––– 100
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
––– ––– 200 ––– ––– -200
V VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
Ω
VGS = 10V, ID = 16A VGS = 4.5V, ID = 13A
VGS = 2.8V, ID = 3.5A
V VDS = VGS, ID = 250μA
μA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C
nA
VGS = 12V VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs Forward Transconductance
44 ––– –––
Qg Total Gate Charge
––– 41 62
Qgs Gate-to-Source Charge
––– 9.7 15
Qgd Gate-to-Drain ("Miller") Charge
––– 18 27
td(on)
Turn-On Delay Time
––– 20 –––
tr Rise Time
––– 25 –––
td(off)
Turn-Off Delay Time
––– 50 –––
tf Fall Time
––– 52 –––
Ciss Input Capacitance
––– 3640 –––
Coss Output Capacitance
––– 1570 –––
Crss Reverse Transfer Capacitance
––– 330 –––
Units S nC
ns
pF
Conditions
VDS = 10V, ID = 16A ID = 16A VDS = 16V VGS = 5.0V, VDD = 10V ID = 1.0A RG = 6.0Ω VGS = 4.5V VGS = 0V VDS = 15V ƒ = 1.0MHz
Avalanche Characteristics
Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energ.