IRF7473PBF-1

VDS RDS(on) max (@VGS = 10V) Qg (typical) ID (@TA = 25°C) 100 V 26 mΩ 61 nC 6.9 A Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification IRF7473PbF-1 S1 S2 HEXFET® Power MOSFET AA 8D 7D S3 G4 6D 5D Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number Package Type IRF7473PbF-1 SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7473PbF-1 IRF7473TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 6.9 5.5 55 2.5 0.02 ± 20 5.8 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Notes  through † are on page 8 1 www.irf.com © 2014 International Rectifier Typ. ––– ––– Submit Datasheet Feedback Max. 20 50 Units °C/W June 23, 2014 IRF7473PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp...