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IRF7478PBF-1

International Rectifier

Power MOSFET

SMPS MOSFET IRF7478PbF-1 VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 60 V 26 ...


International Rectifier

IRF7478PBF-1

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Description
SMPS MOSFET IRF7478PbF-1 VDS RDS(on) max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 60 V 26 mΩ 30 21 nC 7.0 A Applications l High frequency DC-DC converters Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification S1 S2 HEXFET® Power MOSFET AA 8D 7D S3 G4 6D 5D Top View SO-8 Benefits ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Base Part Number IRF7478PbF-1 Package Type SO-8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7478PbF-1 IRF7478TRPbF-1 Absolute Maximum Ratings ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation„ Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 7.0 5.6 56 2.5 0.02 ± 20 3.7 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient „ Typ. ––– ––– Max. 20 50 Units °C/W Notes  through † are on page 8 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 IRF7478PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. ...




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