KTC3112

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE ᴌHigh DC Current Gain : hFE=600ᴕ3600. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB PC Tj Tstg RATING 50 50 5 150 30 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTC3112 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector- Emitter Saturation Voltage Transition Frequency Collector Output Capacitance ICBO IEBO hFE(Note) VCE(sat) fT Cob VCB=50V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC=100mA, IB=10mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz Noise Figure Note: hFE Classification NF(1) NF(2) A:600ᴕ1800 , B:1200ᴕ3600 VCE=6V, IC=0.1mA, f=100Hz, Rg=10kή VCE=6V, IC=0.1mA, f=1kHz, Rg=10kή MIN. - 600 - 100 - TYP. 0.1 250 3.5 0.5 0.3 MAX. 0.1 0.1 3600 0.25 - UNIT ỌA ỌA V MHz pF dB dB 1994. 12. 20 Revision No : 0 1/3 COLLECTOR CURRENT I C (mA) KTC3112 160 COMMON 140 EMITTER 120 Ta=25 C 100 80 60 40 20 0 01 I C - VCE 400 200 100 80 60 50 40 30 20 IB =10µA ...