KTC3192

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE ᴌHigh Power Gain : Gpe=29dB(Typ.) (f=10.7MHz). MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IE PC Tj Storage Temperature Range Tstg RATING 35 30 4 50 -50 625 150 -55ᴕ150 UNIT V V V mA mA mW ᴱ ᴱ L M C KTC3192 EPITAXIAL PLANAR NPN TRANSISTOR BC JA K E G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=35V, IE=0 Emitter Cut-off Current IEBO VEB=4V, IC=0 DC Current Gain hFE (Note) VCE=12V, IC=2mA Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA Transition Frequency fT VCE=10V, IC=1mA Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz Collector-Base Time Constant Ccᴌrbbᴯ VCE=10V, IE=-1mA, f=30MHz Power Gain Gpe 0 VCC=6V, IE=-1mA, f=10.7MHz (Fig.) Note : hFE Classification R:40ᴕ80 , O:70ᴕ140 , Y:120ᴕ240 MIN. 40 - 100 1.4 10 27 TYP. 2.0 29 MAX. 0.1 1.0 240 0.4 1.0 400 3.2 50 33 UNIT ỌA ỌA V V MHz pF pS dB 1996. 9. 6 Revision No : 1 1/4 Fig. Gpe TE...