KTC3194

SEMICONDUCTOR TECHNICAL DATA HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES Small Reverse Transfer Capacitance : Cre=0.7pF(Typ.). Low Noise Figure : NF=2.5dB(Typ.) (f=100MHz). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Emitter Current IE Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 40 30 4 20 -20 625 150 -55 150 UNIT V V V mA mA mW L M C KTC3194 EPITAXIAL PLANAR NPN TRANSISTOR BC JA KE G D H FF 1 23 N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=40V, IE=0 Emitter Cut-off Current IEBO VEB=4V, IC=0 DC Current Gain hFE (Note) VCE=6V, IC=1mA Reverse Transfer Capacitance Cre VCB=6V, f=1MHz, IE=0 Transition Frequency fT VCE=6V, IC=1mA Collector-Base Time Constant Cc rbb’ VCB=6V, IE=-1mA, f=30MHz Noise Figure Power Gain NF VCC=6V, IE=-1mA Gpe f=100MHz (Fig.) Note : hFE Classification R:40 80 , O:70 140 , Y:100 200 MIN. 40 - 300 15 TYP. 0.7 550 2.5 18 MAX. 0.5 0.5 200 30 5.0 - UNIT A A pF MHz pS dB 2001. 12. 28 Revision No : 1 1/6 KTC3194 Fig. NF Gpe TEST CIRCUIT INPUT Rg=50Ω 0.01µF DUT 1000pF 2.2...